Semiconductor laser device with a V-channel and a mesa

Details Semiconductor laser device with a V-channel and a mesa Semiconductor laser device with a V-channel and a mesa

1986-04-10

1988-06-28

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, 357 17, 357 56, H01S 319

Patent

active

047544627

ABSTRACT:
A semiconductor laser device comprises an active layer, a current blocking striped-channel formed below the active layer in such a manner that light in the active layer for laser oscillation is absorbed by both shoulders of the striped channel, this results in an index-guided optical waveguide being formed within the active layer. Mesa channels are formed outside of the optical waveguide in a manner to cut off. The active layer, the distance between the mesa-channels is greater than the distance between the shoulders of said striped channel.

REFERENCES:
Applied Physics Letters, vol. 40, No. 5, Mar. 1982, pp. 372-374, by Yamamoto et al., "Visible GaAlAs V-channeled Substrate Inner Stripe Laser with Stabilized Mode Using p-GaAs Substrate".

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