Semiconductor laser device with a misoriented substrate

Details Semiconductor laser device with a misoriented substrate Semiconductor laser device with a misoriented substrate

1994-07-01

1996-12-17

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 319

Patent

active

055861369

ABSTRACT:
A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a <011> direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.

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H. C. Casey, Jr.; M. B. Panish Heterostructure Lasers Part B: Materials and Operating Characteristics, pp. 7-8 1978.
High-Power operation of 630 .mu.m-band tensile strained multiquantum-well A1GalnP laser diodes with a multiquantum barrier; Shono et al, ELECTRONICS LETTERS, 27th May 1993, vol. 29, No. 11, pp. 1010-1011.
High temperature (77.degree. C.) operation of 634 .mu.m InGaA1P multiquantum-well laser diodes with tensile-strained quantum wells; Watanabe et al., Appl. Phys. Lett., 63 (11) 13 Sep. 1993.
A1GalnP strained multiple-quantum-well visible laser diodes (.eta..sub.L .ltoreq.630 .mu.m band) with a multiquantum barrier grown on misoriented substrates; Hamada et al., IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993.
Japanese Patent Laid-Open Gazette No. 181361/1994 (6-181361). (Jun. 6, 1994).
Japanese Patent Laid-Open Gazette No. 291687/1993 (5-291687). (Nov. 5, 1993).
29a-k-5 "Strain-compensated multiple quantum well 630 .mu.m band A1GalnP laser diodes"; Hiroyama et al., Extended Abstracts (The 41st Spring Meeting, 1994) No. 3, Mar. 1994.
Self-pulsation 630 nm-band tensile strained MQW A1GalnP diodes; Ikegami et al., Summaries of papers presented at the conference on lasers and electro-optics, vol. 8, 1994 technical Digest Series Conference Edition. (May).
T. Tanaka et al., Tensile Strained QW Structure For Low-Threshold Operation of Short-Wavelenght AlGalnP LDs Emitting In the 630 nm Band, IEE 1993, 19 Jan. 1993, pp. 606-607.
T. Katsuyama et al., 637 nm cw Operation of Low Threshold Current AlGalnP Strained Single Quantum Well Laser Diodes, Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, 1991, pp. 117-119. (no month available).

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