Semiconductor laser device with a diffraction grating

Details Semiconductor laser device with a diffraction grating Semiconductor laser device with a diffraction grating

1986-02-19

1988-05-17

Davie, James W.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, H01S 319

Patent

active

047456167

ABSTRACT:
A semiconductor laser device comprising a GaAlAs first cladding layer, a Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) active layer for laser oscillation, an In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (z=2.04y-1.04, and 0.ltoreq.z.ltoreq.1) optical guiding layer with a diffraction grating thereon, a GaAlAs buffer layer disposed between said active layer and said optical guiding layer, and a GaAlAs second cladding layer, the width of the forbidden band of said buffer layer being greater than that of the active layer and smaller than that of the optical guiding layer.

REFERENCES:
patent: 4025939 (1977-05-01), Aiki et al.
patent: 4340966 (1982-07-01), Akiba et al.
patent: 4704720 (1987-11-01), Yamaguchi
J. L. Merz, "III-V heterostructure devices . . . ," Optical Engineering, vol. 19, No. 4, Jul./Aug. 1980, pp. 581-586.

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