Semiconductor laser device with a diffraction grating

Details Semiconductor laser device with a diffraction grating Semiconductor laser device with a diffraction grating

1985-10-21

1988-05-17

Davie, James W.

Coherent light generators

Particular resonant cavity

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372 45, H01S 319

Patent

active

047456159

ABSTRACT:
A semiconductor laser device for laser oscillation at a wavelength in the range of from 660 nm to 890 nm which includes an active layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) or In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (0.51.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, and z=2.04y-1.04) and a layer with a diffraction grating thereon of In.sub.1-y Ga.sub.y P.sub.1-z As (z=2.04y-1.04) which is adjacent to the active layer.

REFERENCES:
patent: 4575851 (1986-03-01), Seki et al.
patent: 4704720 (1987-11-01), Yamaguchi
H. Watanabe et al., "(Invited) InGaAsP Visible Laser Crystal", Japanese Journal of Applied Physics, Supp., vol. 22, supp. 22-1, 1983, pp. 315-320.
M. Razeghi et al., "CW Operation of . . . ", Applied Physics Letters, vol. 45, No. 7, 10/1/84, pp. 784-786.
K. Wakao et al., "Low-threshold . . . ", Electronics Letters, vol. 20, No. 9, 4/26/84, pp. 374-375.

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