Semiconductor laser device which is stable for a long period of

Details Semiconductor laser device which is stable for a long period of Semiconductor laser device which is stable for a long period of

1989-09-29

1990-05-15

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, H01S 319

Patent

active

049264311

ABSTRACT:
A semiconductor laser device comprises a substrate and a multi-layered crystal structure with an active layer for laser-oscillating operation, the multi-layered crystal structure being disposed on the substrate and having a striped channel area through which current is supplied to the active layer and a light-absorbing area positioned outside of the channeled area by which a difference between the amount of light to be absorbed inside of the channeled area and the amount of light to be absorbed outside of the channeled area is created, which causes a difference in the effective refractive index of the active layer, resulting in an optical waveguide in the active layer, wherein the active layer is flat and uniform and the width of the portion of the channel area in the vicinity of at least one facet is wider than that of the remaining portion of the channel area.

REFERENCES:
patent: 4567060 (1986-01-01), Hayakawa et al.
Patent Abstracts of Japan, 5(23), E-45, 695, 12, Feb. 1981.
Patent Abstracts of Japan, 10(293), E-443, 2349, 4 Oct. 1986.
IEEE Journal of Quantum Electronics, QE-19(10), Oct. 1983, pp. 1530-1536.
Patent Abstracts of Japan 11(249), E-532, 2696, 13 Aug. 1987.
Patent Abstracts of Japan, 8(200), E-266, 1637, 13 Sep. 1984.
Patent Abstracts of Japan, 9(189), E-333, 1912, 6 Aug. 1985.

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