Semiconductor laser device, semiconductor laser system,...

Details Semiconductor laser device, semiconductor laser system,... Semiconductor laser device, semiconductor laser system,...

2007-08-21

2007-08-21

Nguyen, Dung (Michael) T. (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S064000

Reexamination Certificate

active

10849554

ABSTRACT:
A semiconductor laser device comprises an n-type cladding layer103made of n−type (Al0.3Ga0.7)0.5In0.5P, an undoped active layer104and a first p-type cladding layer105made of p−type (Al0.3Ga0.7)0.5In0.5P. These layers are successively stacked in bottom-to-top order. The active layer104has a multi-quantum well structure composed of a first optical guide layer of undoped Al0.4Ga0.6As, a layered structure in which well layers of undoped GaAs and barrier layers of undoped Al0.4Ga0.6As are alternately formed, and a second optical guide layer of undoped Al0.4Ga0.6As. The first optical guide layer, the layered structure and the second optical guide layer are successively stacked in bottom-to-top order.

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