Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-03-20
2007-03-20
Rodriguez, Armando (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S050120, C372S068000
Reexamination Certificate
active
10748159
ABSTRACT:
A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.
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Aikiyo Takeshi
Kimura Toshio
Nakae Masashi
Tsukiji Naoki
Yoshida Junji
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Rodriguez Armando
The Furukawa Electric Co. Ltd.
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