Semiconductor laser device, semiconductor laser module, and...

Details Semiconductor laser device, semiconductor laser module, and... Semiconductor laser device, semiconductor laser module, and...

2006-07-04

2006-07-04

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S044010

Reexamination Certificate

active

07072372

ABSTRACT:
The present invention has a lower cladding layer, a lower SCH layer, a quantum well layer, an upper SCH layer, and a first upper cladding layer sequentially laminated on a substrate. A striped-pattern second upper cladding layer that has a longitudinal direction in a laser beam emission direction, and a current blocking layer are laminated on the first upper cladding layer. A third upper cladding layer and a contact layer are laminated sequentially on the second upper cladding layer and the current blocking layer respectively. The current blocking layer has a conduction type different from that of the second upper cladding layer. An effective index of an area that includes the current blocking layer is lower than the same of an area that includes the upper cladding layer.

REFERENCES:
patent: 6384963 (2002-05-01), Ackerman et al.
patent: 6560266 (2003-05-01), Shoji et al.
patent: 6870871 (2005-03-01), Yoshida et al.
patent: 2001-217505 (2001-08-01), None
patent: 2001-235713 (2001-08-01), None
patent: 2002-028398 (2002-02-01), None
T. Okuda, et al., Thursday Morning, pp. 420-421, “Low-Threshold 1.3-μm AlGaInAs Burled Heterostructure Laser Diodes for 85° C., 10-Gb/s Operation”, Mar. 21, 2002.

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