Semiconductor laser device, semiconductor laser module, and...

Details Semiconductor laser device, semiconductor laser module, and... Semiconductor laser device, semiconductor laser module, and...

2005-01-18

2005-01-18

Wong, Don (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045013, C372S096000

Reexamination Certificate

active

06845117

ABSTRACT:
An n-side electrode, an n-substrate, an n-buffer layer, a GRIN-SCH-MQW active layer, a p-spacer, a p-cladding layer, a p-contact layer, and a p-side electrode are laminated one on top another in that order. Above the n-buffer layer, the GRIN-SCH-MQW layer and the p-spacer layer occupy a narrower area than the n-substrate in a direction that is at right angles to the laser emission direction, wherein the remaining area is occupied by a p-blocking layer and an n-blocking layer. Within the p-spacer layer are embedded a first diffraction grating and a second diffraction grating. Between the first and the second diffraction grating and the p-side electrode is provided a current non-injection area.

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P. Vavassori, et al., Technical Digest on Optical Amplifiers and their Applications, 3 pages, “New EDFA Pumping Scheme Insensitive to 980 NM Diode Lasers Temperature Variation”, Jul. 2001.

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