Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-05-24
2005-05-24
Harvey, MinSun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045013, C372S096000
Reexamination Certificate
active
06898228
ABSTRACT:
A diffraction grating is provided in the vicinity of a GRIN-SCH-MQW active layer formed between a radiation side reflection coating provided on a radiation end face of a laser beam and a reflection coating provided on a reflection end face of the laser beam, and on the radiation side reflection coating side. An n-InP layer which covers the upper part of the diffraction grating is also provided, so that the current from the p-side electrode is prevented from being injected to the vicinity of the diffraction grating by the n-InP layer. An n-InPGaAsP diffusion prevention layer forms a non-current injection area so as to suppress alloying with the p-side electrode.
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Irino Satoshi
Tsukiji Naoki
Yoshida Junji
Harvey MinSun Oh
Menefee James
The Furukawa Electric Co. Ltd.
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