Semiconductor laser device protection circuit, optical...

Dynamic information storage or retrieval – Specific detail of information handling portion of system – Radiation beam modification of or by storage medium

Reexamination Certificate

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C361S091100, C315S119000

Reexamination Certificate

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07952981

ABSTRACT:
A semiconductor laser device has a cathode grounded and an anode connected to a collector of a transistor. The transistor has an emitter grounded and a base connected to a first external terminal via a first resistor. A digital transistor has a collector connected to the base of the transistor, an emitter grounded, and a base connected to a second external terminal via a resistor. When a voltage equal to or higher than the predetermined first voltage is applied to the base of the transistor, the transistor is put into a conducting state, and the semiconductor laser device is grounded via the transistor and thereby protected from static electricity and leak current.

REFERENCES:
patent: 7207325 (2007-04-01), Ando
patent: 7491584 (2009-02-01), Yu et al.
patent: 2003/0107324 (2003-06-01), Cho et al.
patent: 2009/0002050 (2009-01-01), Chen
patent: 1423261 (2003-06-01), None
patent: 6-52018 (1994-07-01), None
patent: 2006-49549 (2006-02-01), None

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