Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-09-26
2006-09-26
Harvey, Min Sun (Department: 2828)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C372S043010, C372S046012, C372S046013, C372S050100, C372S049010, C438S042000, C438S027000, C438S032000, C438S029000
Reexamination Certificate
active
07112460
ABSTRACT:
A semiconductor laser device includes a semiconductor substrate on which a semiconductor thin film including an active layer is lamineted, a pair of electrodes respectively provided on opposite faces of the substrate, a light emitting surface defined on a side face of the substrate to which the active layer and an edge of at least one of the electrodes are exposed, and a protective film covering the light emitting surface. The protective film has a smaller thickness on the edge of the electrode than on the active layer. This arrangement makes it possible to suppress diffusion of an electrode material in the protective film and sufficiently protect the light emitting surface.
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Office Action mailed Mar. 17, 2006, for Chinese Patent Application No. 200310123320.8, two pages, and English translation, four pages.
Flores Ruiz Delma R.
Harvey Min Sun
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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