Semiconductor laser device, method for fabricating the same,...

Details Semiconductor laser device, method for fabricating the same,... Semiconductor laser device, method for fabricating the same,...

2007-11-06

2007-11-06

Nguyen, Dung (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010, C372S045010

Reexamination Certificate

active

10943127

ABSTRACT:
A semiconductor laser device (10) includes a resonant cavity (12) in which a quantum well active layer (11) made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film (13) is formed on a reflective end facet (10b) opposite to a light-emitting end facet (10a) in the resonant cavity (12). The end facet reflective film (13) has a structure including a plurality of unit reflective films (130), each of which is made up of a low-refractive-index film (13a) of silicon dioxide and a high-refractive-index film (13b) of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity (12).

REFERENCES:
patent: 5372874 (1994-12-01), Dickey et al.
patent: 5844931 (1998-12-01), Sagawa et al.
patent: 5872759 (1999-02-01), Yamanaka
patent: 6081637 (2000-06-01), Rekow
patent: 6249534 (2001-06-01), Itoh et al.
patent: 6285702 (2001-09-01), Caprara et al.
patent: 6618409 (2003-09-01), Hu et al.
patent: 6798811 (2004-09-01), Sugahara et al.
patent: 1 043 765 (2000-10-01), None
patent: 1 575 138 (2005-09-01), None
patent: 60-182526 (1985-09-01), None
patent: 01-167231 (1989-06-01), None
patent: 04-299591 (1992-10-01), None
patent: 5-502310 (1993-04-01), None
patent: 06-097570 (1994-04-01), None
patent: 06-111792 (1994-04-01), None
patent: 07-7225 (1995-01-01), None
patent: 09-283843 (1997-10-01), None
patent: 10-31106 (1998-02-01), None
patent: 11-186656 (1999-07-01), None
patent: 2000-022269 (2000-01-01), None
patent: 2000-164978 (2000-06-01), None
patent: 2000-216476 (2000-08-01), None
patent: 2005-311308 (2005-11-01), None
Masaru Kuramoto et al.; “Room-Temperature Continuous-Wave Operation of InGan Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact”,Japanese Journal of Applied Physics; vol. 38; pp. L184-L196; c. 1999.

Affiliated with

Also associated with

Rating

Semiconductor laser device, method for fabricating the same,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, method for fabricating the same,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device, method for fabricating the same,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3853046