Semiconductor laser device, method for driving the same, and opt

Coherent light generators – Particular beam control device – Modulation

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372 46, 372 50, 372 96, H01S 310, H01S 319

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active

057578281

ABSTRACT:
A semiconductor laser device includes a semiconductor substrate, an active layer formed on the substrate extending along a light propagation direction, a first light guide layer extending along the active layer to form a waveguide together with the active layer in which light waves in two different polarization modes can be propagated, a current injection unit for injecting a laser bias current into the active layer, and a control unit for supplying one of a current and a voltage to the first light guide layer independently from the laser bias current injected by the current injection unit. The first light guide layer is formed such that coupling states, in which the light waves in the two different polarization modes are respectively coupled to the active layer and the first light guide layer, can be changed independently from each other by controlling one of the current and the voltage supplied by the control unit. Centers of the light distributions of propagated light waves for the two different polarization modes can be shifted upward or downward differently from each other, so that the coupling degrees of the propagated light waves in the two polarization modes to the active layer are differently controlled to change the threshold current density for at least one of the different polarization modes.

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Wolf, T., et al. "Tunable Twin-Guide (TTG) Distributed Feedback (DFB) Laser with Over 10 nm Continuous Tuning Range", Electronics Letters, vol. 29, No. 24, pp. 2124-2125 (Nov. 1993).

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