Semiconductor laser device manufacturing method and...

Semiconductor device manufacturing: process – With measuring or testing – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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C438S026000, C438S466000, C257SE21521, C257SE21522, C257SE21525, C257SE21529, C257SE21530, C257SE21531

Reexamination Certificate

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07629185

ABSTRACT:
A semiconductor laser device manufacturing method includes, sequentially, a first aging step S1,a first inspection step S2,a mounting step S3,a second aging step S4and a second inspection step S5.Since the first aging step S1on a semiconductor laser chip with a high-temperature direct current conduction is performed before the mounting step S3,threshold current and drive current of the semiconductor laser chip before mounting can be reduced.

REFERENCES:
patent: 4817849 (1989-04-01), Yamamoto et al.
patent: 4-184175 (1992-07-01), None
patent: 5-275813 (1993-10-01), None
patent: 10-321685 (1998-12-01), None

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