Coherent light generators – Particular active media – Semiconductor
Patent
1992-04-21
1994-03-22
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
052971589
ABSTRACT:
In a semiconductor laser device, a Ga.sub.1-y Al.sub.y As cladding layer of a conduction type is provided on at least one principal plane of an active layer, while a Ga.sub.1-Z Al.sub.Z As current blocking layer of the other conduction type is provided on the cladding layer and has a stripe-like window. The AlAs mode fractions Y and Z has a relation, Z>Y. The semiconductor laser device has low noises and a low operating current value.
REFERENCES:
patent: 5105432 (1992-04-01), Murakami et al.
patent: 5161167 (1992-11-01), Murakami et al.
patent: 5189680 (1993-02-01), Kimura
S. Yamashita et al., IEEE Journal of Quantum Electronics, vol. 27, pp. 1544-1549, 6 Jun. 1991.
K. Oomie et al., Appl. Phys. Lett., 45, pp. 818-820 (15 Oct. 1984).
H. Narto et al., IEEE Journ. of Quantum Electronics, vol. 25, pp. 1495-1499 (6 Jun. 1989).
S. Takigawa et al., Appl. Phys. Lett., 51, pp. 1580-1581 (16 Nov. 1987).
M. Sakamoto et al., Appl. Phys. Lett. 52, pp. 2220-2221 (27 Jun. 1988).
D. F. Welch et al., Electronics Lett., vol. 26, pp. 757,758 (1990).
K. Tateoka et al., IEEE Journal of Quantum Electronics, vol. 27, pp. 1568-1573, 6 Jun. 1991.
Kume Masahiro
Naitou Hiroki
Ota Issei
Shimizu Hirokazu
Davie James W.
Matsushita Electric - Industrial Co., Ltd.
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