Semiconductor laser device having strain buffer layer...

Details Semiconductor laser device having strain buffer layer... Semiconductor laser device having strain buffer layer...

2005-12-06

2005-12-06

Harvey, Mingun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S044010, C372S045013, C257S018000

Reexamination Certificate

active

06973109

ABSTRACT:
A semiconductor laser device having an active region including alternating layers of at least one quantum well layer and a plurality of barrier layers, where two of the plurality of barrier layers are the outermost layers of the alternating layers. Each of the at least one quantum well layer has a compressive strain, and each of the plurality of barrier layers has a tensile strain. In the active region, a strain buffer layer having an intermediate strain is formed between each quantum well layer and each of two barrier layers adjacent to the quantum well layer. Interfacial strain is thus reduced, improving high-output-power characteristics.

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