Semiconductor laser device having reflectance control film forme

Details Semiconductor laser device having reflectance control film forme Semiconductor laser device having reflectance control film forme

1991-06-18

1992-09-01

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

051446359

ABSTRACT:
A reflectance control film is formed on the end facet of an oscillator in a semiconductor laser device. The reflectance control film has a laminated structure of a first thin film formed on the end facet of the oscillator and a second thin film formed on the first thin film. The film thickness of the first thin film is set to be ".lambda./4n.sub.1 " and n.sub.1 .ltoreq.1.8 where the peak wavelength of the oscillator is .lambda. and the refractive index of the first thin film is n.sub.1. The film thickness of the second thin film is set to be ".lambda./4n.sub.2 " and 1.9.ltoreq.n.sub.2 .ltoreq.2.6 where the peak wavelength of the oscillator is .lambda. and the refractive index of the second thin film is n.sub.2.

REFERENCES:
patent: 4840922 (1989-06-01), Kobayashi et al.
patent: 4951292 (1990-08-01), Kuindersma et al.
patent: 4975922 (1990-12-01), Sakane et al.

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