Semiconductor laser device having lower threshold current

Details Semiconductor laser device having lower threshold current Semiconductor laser device having lower threshold current

2005-06-28

2005-06-28

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S039000, C372S045013

Reexamination Certificate

active

06912236

ABSTRACT:
A semiconductor laser device includes a QW active layer structure including a GaxIn1−xAs1−ySbylayer wherein 0.3≦1−x and 0.003≦y≦0.008, or a QW active layer structure including a GaxIn1−xAs1−y1−y2Ny1Sby2layer wherein 0.3≦1−x, 0<y1<0.03 and 0.002≦y2≦0.06. The semiconductor laser device suppresses the three-dimensional epitaxial growth, and has superior optical characteristics including a low threshold current.

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