Semiconductor laser device having facets provided with dielectri

Details Semiconductor laser device having facets provided with dielectri Semiconductor laser device having facets provided with dielectri

1984-02-09

1986-07-08

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

045997292

ABSTRACT:
In a semiconductor laser device of the type which includes at least one laminate of a first dielectric layer and a second dielectric layer on at least one of the two facets of a resonator and in which the refractive index of the first dielectric layer is lower than that of the second dielectric layer, the improvement wherein the second dielectric layer consists of an amorphous material containing silicon and hydrogen at its essential constituent elements.

REFERENCES:
patent: 4092659 (1978-05-01), Ettenberg
patent: 4337443 (1982-06-01), Umeda et al.
Ettenberg, "A New Dielectric Facet Reflector for Semiconductor Lasers", Applied Physics Letters, 32(11), Jun. 1, 1978, pp. 724-725.

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