Semiconductor laser device having current confining and built-in

Details Semiconductor laser device having current confining and built-in Semiconductor laser device having current confining and built-in

1984-12-26

1987-09-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

046913211

ABSTRACT:
A hetero junction type semiconductor laser device is provided wherein a hetero layer is formed on a clad layer leaving a stripe shape portion. The clad layer is formed on an active layer over a substrate. At least two coating layers of the same conductivity type as the clad layer are formed on the hetero layer so as to have a current confining effect and a built-in waveguide effect. The refractive index of the coating layers which is nearer to the active layer is greater than the refractive index of the clad layer and the refractive index of the other coating layer is smaller than the refractive index of the coating layer which is nearer to the active layer. Using this construction, a low lasing threshold current is achieved.

REFERENCES:
J. J. Coleman et al., "Single-Longitudinal-Mode Metalorganic Chemical-Vapor-Deposition Self-Aligned GaAlAs-GaAs Double-Heterostructure Lasers", Appl. Phys. Lett., vol. 37, No. 3, Aug. 1, 1980, pp. 262-263.

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