Semiconductor laser device having clad and contact layers respec

Details Semiconductor laser device having clad and contact layers respec Semiconductor laser device having clad and contact layers respec

1997-05-22

1999-08-03

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

438279, 438289, C30B 1906

Patent

active

059320044

ABSTRACT:
A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked on a substrate. Then a clad layer composed of p-type AlGaAs doped with a p-type impurity Mg, and a contact layer composed of p-type GaAs doped also with Mg are grown by an LPE growth process, and further a surface layer having a high-resistance portion present in the contact layer and low in carrier concentration is removed. The active layer for use of laser beam oscillation is arranged in a substantially center of an end surface from which the laser beam is emitted.

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M. Okajima et al., "A New Transverse-Moe Stabilized GaA1As Laser with a Slab-Coupled Waveguide Grown by MOCVD", Extended Abstracts of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, 1984, pp. 153-156.
Imafuji et al, "600 mW cW Single-Mode GaAlAs Tiple-Quantum-Well Laser with a New Index Guided Struture", IEEE Journal of Quantum Electronics Jun. 29, 1993, No. 6, New York, pp. 1889-1894.
Patent Abstracts of Japan, vol. 13, No. 413 (E-820) (3761) Sep. 12, 1989 & JP-A-01 152789 (Mitsubishi Electric Corp.) Jun. 15, 1989, Shima.

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