Semiconductor laser device having an insulation region

Details Semiconductor laser device having an insulation region Semiconductor laser device having an insulation region

2006-06-15

2009-10-13

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Plural active media or active media having plural dopants

C372S019000, C372S050100

Reexamination Certificate

active

07602831

ABSTRACT:
A semiconductor laser device includes a substrate having a first surface and a second surface opposite to the first surface, an active region formed on the second surface of the substrate, a cladding layer formed on the active region, and an insulation region formed in the cladding layer to form on the second surface of the substrate a first laser region having a first size and a second laser region having a second size different from the first size. The first laser region is used for generating a first optical spectrum having a first laser mode channel space. The second laser region is used for generating a second optical spectrum having a second laser mode channel space. A combination of the first optical spectrum and the second optical spectrum forms a single mode laser. Without any gratings, the semiconductor laser device is easy to be fabricated and has a low fabrication cost.

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patent: 60-219786 (1985-11-01), None
patent: WO-2005/117302 (2005-12-01), None

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