Semiconductor laser device having a multi-layer buffer layer

Details Semiconductor laser device having a multi-layer buffer layer Semiconductor laser device having a multi-layer buffer layer

2006-04-25

2006-04-25

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S096000, C438S022000, C438S044000

Reexamination Certificate

active

07034341

ABSTRACT:
An AlGaAs-based semiconductor laser29is formed on an n-type GaAs substrate21and thereafter etching is carried out until reaching an n-type AlGaAs clad layer23from the surface. Next, the n-type AlGaAs clad layer23is removed by etching with an etchant having selectivity to GaAs. Subsequently, the surface of an n-type GaAs buffer layer22is lightly etched. Thus, the n-type GaAs buffer layer22of the AlGaAs-based semiconductor laser29is left in a slightly abraded state on the n-type GaAs substrate21,maintaining the flatness of the groundwork layer during growing an AlGaInP-based semiconductor laser38at the second time. Therefore, the flatness of the crystals of, in particular, an active layer grown at the second time can be improved, and the poor characteristics of the AlGaInP-based semiconductor laser38attributed to the poor flatness of the groundwork can be improved.

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