Semiconductor laser device having a low reflection film of...

Details Semiconductor laser device having a low reflection film of... Semiconductor laser device having a low reflection film of...

2007-11-13

2009-08-18

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S049010

Reexamination Certificate

active

07577173

ABSTRACT:
A semiconductor laser device comprises a GaN substrate having a refractive index of 3.5 or below, a semiconductor layer laminated on the substrate, and a pair of facets forming a resonator and in face-to-face-relation to each other in a direction perpendicular to the direction of the laminated layer. One of the facets of the resonator includes a low reflection film, of a first dielectric film, a second dielectric film, a third dielectric film, and a fourth dielectric film. When the refractive indexes of these films are taken as n1, n2, n3, and n4, n1=n3and n2=n4. The following relationship between the first dielectric film and the third dielectric film, and between the second dielectric film and the fourth dielectric film is established, nd+n′d′=pλ/4, where p is an integer, and λ is oscillation wavelength of a laser beam generated by the semiconductor laser device.

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