Semiconductor laser device having a high emission efficiency and

Details Semiconductor laser device having a high emission efficiency and Semiconductor laser device having a high emission efficiency and

1994-11-28

1996-08-06

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

055441882

ABSTRACT:
A semiconductor laser device includes an active layer having a multiquantum well (MQW) structure including well layers and barrier layers, each well layer being disposed between a pair of barrier layers. In this structure, the barrier layers have respective band gap energies that gradually decrease from a largest value in a central part of the MQW structure toward interfaces of the MQW structure with other layers of the laser and the well layers have respective band gap energies that gradually increase from a smallest value in the central part of the MQW structure toward the interfaces. A semiconductor laser device that produces uniform charge carrier injection, has a high thermal electron emission efficiency, and a broad modulation bandwidth is realized.

REFERENCES:
patent: 4839899 (1989-06-01), Burnham et al.
patent: 5276698 (1994-01-01), Yoshida et al.
patent: 5390205 (1995-02-01), Mori et al.
Nagarajan et al, "High Speed Quantum-Well Lasers And Carrier Transport Effects", IEEE Journal of Quantum Electronics, vol. 28, No. 10, Oct. 1992, pp. 1990-2008.
Ohkura et al, "Low Threshold FS-BH Laser On p-InP Substrate Grown By All-MOCVD", Electronics Letters, vol. 28, No. 19, Sep. 1992, pp. 1844-1845 .

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