Semiconductor laser device having a high characteristic...

Details Semiconductor laser device having a high characteristic... Semiconductor laser device having a high characteristic...

2005-02-22

2005-02-22

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S018000, C257S022000

Reexamination Certificate

active

06858863

ABSTRACT:
A semiconductor laser device includes a resonant cavity formed on a GaAs substrate, the resonant cavity including a quantum well (QW) active layer structure having a GaInNAs(Sb) well layer and a pair of barrier layers. The QW structure has a conduction band offset energy (ΔEc) equal to or higher than 350 milli-electron-volts (meV) between the well layer and the barrier layers, and each of the barrier layers a tensile strain equal to or lower than 2.5%.

REFERENCES:
patent: 6153894 (2000-11-01), Udagawa
patent: 20020034203 (2002-03-01), Shimizu et al.
patent: 2000-277867 (2000-06-01), None

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