Semiconductor laser device having a double heterojunction struct

Details Semiconductor laser device having a double heterojunction struct Semiconductor laser device having a double heterojunction struct

1984-07-05

1987-01-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

046352686

ABSTRACT:
A double heterojunction structure type semiconductor laser device comprising an active layer of GaAlAs in which the laser is excited, n-Ga.sub.0.45 Al.sub.0.55 As clad layer and a p-Ga.sub.0.45 Al.sub.0.55 As clad layer sandwiching the active layer between them in order to confine the laser light in the active layer, an n-GaAs current blocking layer disposed between the active layer and the p-Ga.sub.0.45 Al.sub.0.55 As clad layer in order to confine current, and a p-Ga.sub.0.63 Al.sub.0.37 As optical waveguide layer disposed between the active layer and the current confinement layer. The refractive index of the optical waveguide layer is greater than that of the both of the clad layers.

REFERENCES:
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patent: 4011113 (1977-03-01), Thompson et al.
patent: 4329660 (1982-05-01), Yano et al.
H. Kressel et. "Large-Optical-Cavity (AlGa) As-GaAs Heterojunction Laser Diode: Threshold and Efficiency", J. Appl. Phys. vol. 43, No. 2, Feb. 1972, pp. 561-567.
Coleman et al., "Single-Longitudinal-Mode Metalorganic Chemical-Vapor-Deposition Self-Aligned GaAlAs-GaAs Double-Heterostructure Lasers", Appl. Phys. Lett., 37(3) Aug. 1, 1980, pp. 262-263.
Chinn et al., "TE Modes of Graded-Index Large-Optical-Cavity Waveguides", Optics Communications, vol. 40, No. 3, Jan. 1, 1982, pp. 179-184.
Turley, "Optical Waveguiding in (In, Ga)(As, P) Inverted Rib Waveguide Lasers at 1.3 um Wavelength", IEEE Journal of Quantum Electronics, vol. QE-19, No. 7, Jul. 1983, pp. 1186-1195.

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