Semiconductor laser device having a COD-preventing structure

Details Semiconductor laser device having a COD-preventing structure Semiconductor laser device having a COD-preventing structure

1997-10-02

1999-10-05

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257103, 257751, 372 45, 372 48, 372 49, H01L 3300

Patent

active

059628731

ABSTRACT:
In a semiconductor laser device comprising a semiconductor laser main body having an active layer formed between a pair of cladding layers, and a non-absorbing layer of InGaP formed on the facets of the semiconductor laser main body and having a band gap greater than the band gap of the active layer,

REFERENCES:
patent: 5228047 (1993-07-01), Matsumoto et al.
Masanori Watanabe et al, "Fundamental-Transverse-Mode High-Power AlGaInP Laser Diode with Windows Grown on Facets", IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, No. 2, Jun. 1, 1995, pp. 728-733.

Affiliated with

Also associated with

Rating

Semiconductor laser device having a COD-preventing structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device having a COD-preventing structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device having a COD-preventing structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1174362