Semiconductor laser device featuring group III and IV compounds

Details Semiconductor laser device featuring group III and IV compounds Semiconductor laser device featuring group III and IV compounds

1992-08-21

1994-12-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053751370

ABSTRACT:
There is provided a high-quality semiconductor laser device having a current confinement feature along with a method of manufacturing the same in a simple manner. The upper clad layer 4 of a semiconductor laser device is a semiconductive layer made of a compound of elements of the III and V groups doped with an amphoteric impurity substance and the electric resistance of the lateral slopes is greater on the top of the mesa than on the upper clad layer 4 of the mesa. A method of manufacturing a semiconductor laser device comprises a step of repeating a cycle of crystal growth operation of sequentially forming a layer of an element of the III group, a layer of an amphoteric impurity substance and a layer of an element of the V group on said substrate by means of an MBE technique to produce said upper clad layer made of a compound of elements of the III and V groups.

REFERENCES:
patent: 5271028 (1993-12-01), Kondo et al.
"High-power fundamental mode AlGaAs quantum well channeled sub substrate laser grown by molecular beam epitaxy", Jaeckel et al., Appl. Phys. lett 55(11), Sep. 11, 1989, pp. 1059-1061.
"Inner-Stripe AlGaAs/GaAs Laser Diode by Single-Step Molecular Beam Epitaxy", Imanaka et al., Electronics Letters, Feb. 26, 1987, vol. 23, No. 5, pp. 209-210.

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