Semiconductor laser device fabrication

Details Semiconductor laser device fabrication Semiconductor laser device fabrication

1989-11-13

1991-01-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

H01L 29205

Patent

active

049835416

ABSTRACT:
Disclosed herein is a semiconductor laser device capable of exhibiting very low threshold current and operating in a fundamental transverse mode stably even at a high power operation, and a method for fabricating the same. The fabricating method includes only two crystal growth steps to thereby produce the semiconductor laser device capable of operating in the fundamental transverse mode at high power operation. The thus obtained device has high reproducability due to the simple fabricating process.

REFERENCES:
patent: 4532631 (1985-07-01), Shima
patent: 4630279 (1986-12-01), Kajimura
patent: 4750184 (1988-06-01), Kumabe

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