Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-12-06
2005-12-06
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S031000, C438S032000
Reexamination Certificate
active
06972205
ABSTRACT:
In a semiconductor laser device, a semiconductor laser chip is placed on a stem so that an end surface of the semiconductor laser chip, on which the main radiation side light emission point is located, protrudes from an edge of a header portion of the stem or from an edge of a header portion of a sub-mount provided on the stem so as to conceal no light emission points of the semiconductor. A conductive die bonding paste is used for the die bonding of the semiconductor laser chip. A chamfered portion or a rounded corner portion is formed at the edge of the header portion of the stem or the edge of the header portion of the sub-mount provided on the stem. Also, an optical pickup is constructed of at least the semiconductor laser device, a diffraction grating, a photodetector, a condenser lens and an object lens.
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Hamaoka Osamu
Horiguchi Takeshi
Kohashi Ikuo
Coleman W. David
Nguyen Khiem D.
Nixon & Vanderhye P.C.
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