Semiconductor laser device fabricating method

Details Semiconductor laser device fabricating method Semiconductor laser device fabricating method

2005-07-19

2005-07-19

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S034000, C438S039000

Reexamination Certificate

active

06919217

ABSTRACT:
An AlGaAs-based semiconductor laser29is formed on an n-type GaAs substrate21, and thereafter, a non-doped GaAs protective layer30is formed. When the n-type substrate21is exposed by removing by etching a partial region of the AlGaAs-based semiconductor laser29, an impurity Zn is prevented from evaporating from a p-type GaAs contact layer28. The deterioration of the characteristic of contact with a p-type electrode as a consequence of a reduction in the carrier density of the p-type contact layer28can be prevented. Furthermore, the impurity evaporated from the p-type contact layer28can be prevented from readhering onto the exposed n-type substrate21. A layer where the n-type GaAs substrate21and the readhering impurity are mixed with each other is not formed when an AlGaInP-based semiconductor laser38is succeedingly formed, and the reliability in long-term operation can be improved.

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