Semiconductor laser device fabricating method

Details Semiconductor laser device fabricating method Semiconductor laser device fabricating method

1988-11-18

1990-08-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG95, 148DIG110, 156610, 372 46, 437117, 437133, H01L 2120

Patent

active

049468022

ABSTRACT:
A high-power AlGaAs/GaAs laser device comprises: a ridge formed on the top surface of a substrate from one end to the opposite end, thereof wherein the width of the ridge is made narrower in regions near both the ends and wider in a middle region; a depression is formed in the wider region of the ridge; a clad layer is grown epitaxially over the top surface of the substrate; and an active layer is grown epitaxially on the clad layer, wherein the thickness of the active layer is thinner in portions just above the narrower ridge regions and relatively thicker in a portion just above the wider ridge region.

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patent: 4689797 (1987-08-01), Olshansky
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patent: 4819245 (1989-04-01), Morimoto et al.
T. Murakami et al, "High-Power AIGaAs Laser With a Thin Tapered-Thickness Active Layer", Electronics Letters, 13 Feb. 1986, vol. 22, No. 4, pp. 217-218.

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