Semiconductor laser device capable of radiating a visible ray

Details Semiconductor laser device capable of radiating a visible ray Semiconductor laser device capable of radiating a visible ray

1978-11-28

1981-08-25

Davie, James W.

Oscillators

Molecular or particle resonant type

H01S 319

Patent

active

042862310

ABSTRACT:
Disclosed is a semiconductor laser device capable of radiating a visible laser in which device an activation layer having an active stripe zone doped by ion-implantation of nitrogen atoms is vertically sandwiched between an overlying p-type confining layer and n-type confining layer, and the p-type confining layer is horizontally bounded by a p-n junction reverse bias layer, whereby in supplying a bias electric current through the p-type confining layer, the electric current avoids the counter bias layer to converge a flow through the active zone to the underlying n-type confining layer, thus attaining the same effect as would lower the threshold value of the luminescent semiconductor, and allowing the laser device to oscillate at an elevated efficiency in the range of visible laser.

REFERENCES:
patent: 4105955 (1978-08-01), Hayashi et al.
Y. Makita et al., "Visible-Light Laser Oscillation in Indirect-Bandgap Al.sub.x Ga.sub.1-x As(77K), IEEE J. of Quantum Electronics, vol. QE-13, No. 8, Aug. 1977, pp. 642-646.

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