Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-02-14
2006-02-14
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045010
Reexamination Certificate
active
06999488
ABSTRACT:
A ridge section constructed of a p-type second AlGaInP clad layer8, a p-type GaInP interlayer9and a p-type GaAs cap layer10is formed on an etching stop layer7. A step of not smaller than 0.13 μm is formed between the p-type interlayer9and the p-type second clad layer8by making the p-type interlayer9protrude in both widthwise directions beyond the p-type second clad layer8. With this step, AlInP layers can be formed separately from each other on both sides of the ridge section and on the ridge section. Therefore, when the AlInP layer on the ridge section is removed by etching, an AlInP current constriction layer13located on both sides of the ridge section is reliably protected by a resist film and not over-etched. The AlInP current constriction layer13effectively puts a current constriction function into effect, so that a semiconductor laser device of low-threshold current and low-power consumption is obtained.
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Harvey Minsun Oh
Morrison & Foerster / LLP
Nguyen Tuan N.
Sharp Kabushiki Kaisha
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