Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-08-01
2006-08-01
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S095000, C257S096000, C438S022000, C438S032000, C438S039000, C372S046012, C372S049010
Reexamination Certificate
active
07084433
ABSTRACT:
In this semiconductor laser device, an InGaP etching block layer11as an etching selection layer having etching selectivity for an n-type AlInP current block layer10, which is a non-optical-absorption layer, is formed on the n-type current block layer10. Since this etching block layer11prevents the current block layer10on both sides of a ridge20from being etched during manufacture, a contact layer12can be prevented from entering gaps between the sides of this ridge20and the current block layer10. Therefore, light oscillating in an active layer4is taken out from a device end surface without being absorbed in the contact layer12. According to this semiconductor laser device, an oscillation threshold current and an operation current can be maintained low, deterioration of differential quantum efficiency can be prevented and reliability can be improved.
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Hayashi Hiroshi
Hosoba Hiroyuki
Tsunoda Atsuo
Erdem Fazli
Flynn Nathan J.
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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