Coherent light generators – Particular active media – Semiconductor
Patent
1989-02-09
1990-05-01
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
049224999
ABSTRACT:
A gain waveguide type semiconductor laser oscillating visible light has an N type GaAs substrate of, and a double-heterostructure provided above the substrate to include an InGap active layer, and first and second cladding layers sandwiching the active layer. The first cladding layer consists of N type InGaAlP, whereas the second cladding layer consists of P type InGaAlP. A P type InGaP layer is formed as an intermediate band-gap layer on the second cladding layer. An N type GaAs current-blocking layer is formed on the intermediate band-gap layer, and has an elongated waveguide opening. A P type GaAs contact layer is formed to cover the current-blocking layer and the opening. The intermediate band-gap layer has a carrier concentration, in a layer portion being in contact with the opening, high enough to cause a current injected in the oscillation mode to concentrate on the layer portion and has a carrier density, in the remaining layer portion, low enough to suppress or prevent the injected current from spreading thereinto. The layer portion may be formed by additionally doping a selected impurity into the intermediate gap layer by using a presently available impurity diffusion/injection technique.
REFERENCES:
patent: 4213808 (1980-07-01), Thompson et al.
patent: 4517674 (1985-05-01), Liu et al.
patent: 4546479 (1985-10-01), Ishikawa et al.
patent: 4635268 (1987-01-01), Motegi et al.
patent: 4792958 (1988-12-01), Ohba et al.
patent: 4799228 (1989-01-01), Nagasaka et al.
patent: 4809287 (1989-02-01), Ohba et al.
Ishikawa Masayuki
Kokubun Yoshihiro
Nishikawa Yukie
Nitta Koichi
Tsuburai Yasuhiko
Davie James W.
Kabushiki Kaisha Toshiba
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