Semiconductor laser device and semiconductor laser device array

Details Semiconductor laser device and semiconductor laser device array Semiconductor laser device and semiconductor laser device array

2011-02-08

2011-02-08

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S050120, C372S092000

Reexamination Certificate

active

07885305

ABSTRACT:
In an active layer15of a semiconductor laser device3, a refractive index type main waveguide4is formed by a ridge portion9aof a p-type clad layer17. Side surfaces4gand4hof the main waveguide4form a relative angle θ, based on a total reflection critical angle θc at the side surfaces4gand4h, with respect to a light emitting surface1aand a light reflecting surface1b. The main waveguide4is separated by predetermined distances from the light emitting surface1aand the light reflecting surface1b, and optical path portions8aand8b, for making a laser light L1pass through, are disposed between one end of the main waveguide4and the light emitting surface1aand between the other end of the main waveguide4and the light reflecting surface1b. The optical path portions8aand8bare gain type waveguides and emit light components L2and L3, which, among the light passing through the optical path portions8aand8b, deviate from a direction of a predetermined axis A, to the exterior. A semiconductor laser device and a semiconductor laser device array that can emit laser light of comparatively high intensity and can reduce side peaks are thereby realized.

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