Coherent light generators – Particular active media – Semiconductor
Patent
1996-07-03
1998-09-15
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, 372 50, H01S 319
Patent
active
058090533
ABSTRACT:
A semiconductor laser device is disclosed, in which two semiconductor layers of different conduction types are formed on a semiconductor substrate, an active semiconductor layer having a forbidden band width narrower than the two semiconductor layers is formed between the two semiconductor layers, and a waveguide encloses the light in a plane parallel to the active layer. The waveguide includes at least two regions of different widths. The wider one of the waveguide regions is located in the vicinity of the end surface of the semiconductor laser. A relation holds that .pi./6<L.times.(K.sub.0 -K.sub.2) <.pi..times.5/6, where L is the length of the wider waveguide region, and K.sub.0, K.sub.2 are propagation constants of the zeroth-order and second-order transverse modes, respectively, propagating in the waveguide.
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Holland, Gary L., "A Resolution Enhancement Technique for Electrophotographic Printers", SID 90 DIGEST pp. 278-279, 1990 (no month).
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Arimoto Akira
Kobayashi Shin'ya
Maruo Seiji
Nakatsuka Shin'ichi
Saito Susumu
Davie James W.
Hitachi , Ltd.
Hitachi Koki Co,. Ltd.
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