Coherent light generators – Particular component circuitry – Electrode
Reexamination Certificate
2005-11-15
2005-11-15
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular component circuitry
Electrode
C372S043010, C372S046012, C372S029013
Reexamination Certificate
active
06965623
ABSTRACT:
In the semiconductor laser device of the present invention, a P-type diffusion region3A is disposed in an N−epitaxial layer2of a silicon submount16, and an N-type diffusion region4A is disposed in this P-type diffusion region3A. The P-type diffusion region3A and the N-type diffusion region4A are positioned under a red laser diode14, and the red laser diode14is directly connected on the N-type diffusion region4A via electrodes7, 8without an insulating film. Consequently, a short circuit between the red laser diode14and the silicon submount16can be prevented. Therefore, according to this semiconductor laser device, occurrence of deterioration or failure of a semiconductor light-emitting element upon a high-temperature operation can be prevented.
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Fujiyoshi Miki
Uemura Hiroki
Birch & Stewart Kolasch & Birch, LLP
Harvey Minsun Oh
Nguyen Dung (Michael) T.
Sharp Kabushiki Kaisha
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