Semiconductor laser device and method of manufacturing the same

Details Semiconductor laser device and method of manufacturing the same Semiconductor laser device and method of manufacturing the same

2005-05-10

2005-05-10

Jackson, Jerome (Department: 2815)

Coherent light generators

Particular active media

Semiconductor

C372S045013, C372S043010, C372S044010

Reexamination Certificate

active

06891872

ABSTRACT:
A semiconductor laser device is characterized in that an angle θ of inclination formed by the side surfaces of a ridge portion and a lower part of the ridge portion is at least 70° and not more than 117°, a p-type cladding layer is made of AlX1Ga1-X1As, a first current blocking layer is made of AlX2Ga1-X2As, the distance between an emission layer and the first current blocking layer satisfies the relation of t≦0.275/(1−(X2−X1)) assuming that t represents the distance, and a lower width W of the ridge portion is at least 2 μm and not more than 5 μm.

REFERENCES:
patent: 5065402 (1991-11-01), Kawano
patent: 5065404 (1991-11-01), Okajima et al.
patent: 5383215 (1995-01-01), Narui et al.
patent: 5608752 (1997-03-01), Goto et al.
patent: 5786234 (1998-07-01), Nagai et al.
patent: 5838028 (1998-11-01), Horie et al.
patent: 5960019 (1999-09-01), Hayashi et al.
patent: 6118800 (2000-09-01), Kidoguchi et al.
patent: 6127201 (2000-10-01), Chino et al.
patent: 6175582 (2001-01-01), Naito et al.
patent: 6404790 (2002-06-01), Narui et al.
patent: 1169047 (1997-12-01), None
patent: 1218319 (1999-06-01), None
patent: 0 660 472 (1994-12-01), None
patent: 0 782 230 (1997-07-01), None
patent: 0 785 602 (1997-07-01), None
patent: 62-54987 (1987-03-01), None
patent: 08-307010 (1996-11-01), None
patent: 09-116222 (1997-05-01), None
First Office Action with the English Translation issue by The Patent Office of The State Intellectual Property Office Of The People's Republic Of China dated Aug. 8, 2003.
Chinese Office Action dated Feb. 20, 2004.

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