Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2009-10-02
2010-12-21
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257SE21211, C257SE33067
Reexamination Certificate
active
07855093
ABSTRACT:
A method of manufacturing semiconductor laser device capable of reducing κL, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction grating, halogen-based gas is introduced to a reactor, and etching is performed on the diffraction grating so that each side wall has at least two or more crystal faces and a ratio of length of an upper side in a waveguide direction to a bottom side parallel to a (100) surface is 0 to 0.3. And, a reactive product formed on side surfaces of the diffraction grating and in trench portions between stripes of the diffraction grating at an increase of temperature for regrowth is removed. Therefore, the diffraction grating with reduced height and a sine wave shape is obtained, thereby κL of the device is reduced. Thus, an oscillation threshold and optical output efficiency can be improved.
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European Search Report issued in European Patent Application No. EP 07 00 3455.8 dated Nov. 18, 2009.
Komatsu Kazuhiro
Okamoto Kaoru
Sakuma Yasushi
Washino Ryu
Dang Trung
McDermott Will & Emery LLP
Opnext Japan, Inc.
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