Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-03-08
2011-03-08
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S046010
Reexamination Certificate
active
07903709
ABSTRACT:
A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.
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Bessho Yasuyuki
Hata Masayuki
Hiroyama Ryoji
Inoue Daijiro
Ditthavong Mori & Steiner, P.C.
Harvey Minsun
Nguyen Phillip
Sanyo Electric Co,. Ltd.
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