Semiconductor laser device and method of manufacture

Coherent light generators – Particular active media – Semiconductor

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H01S 319

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active

061608300

ABSTRACT:
A Vertical Cavity Surface Emitting Laser (VCSEL) (10) and a method for manufacturing the VCSEL (10). The VCSEL (10) includes a ridge structure (34), a first confinement layer (36) disposed adjacent to a portion of the ridge structure (34), and a second confinement layer (37) disposed on the first confinement layer (36) and disposed adjacent to a portion of the ridge structure (32). Carriers injected into the ridge structure (34) are confined by the first confinement layer (36).

REFERENCES:
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patent: 5966399 (1999-10-01), Jiang
"Effects of Lateral Mode and Carrier Density Profile on Dynamic Behaviors of Semiconductor Lasers" by Naoki Chinone, K. Aiki, M. Nakamura and R. Ito, IEEE Journal of Quantum Electronics, vol. QE14, No. 8, Aug. 1978.
"Singlemode emmission from a passive-antiguide-region vertical cavity surface-emitting laser" by Y.A. Wu, C.J. Chang-Hasnain and R. Nabiev, Electronic Letters, vol. 29, No. 21, 14th Oct. 1993.
"Low threshold buried heterostructure vertical cavity surface emitting laser" by C.J. Chang-Hasnain, Y.A. Wu and G.S. Li, Appl. Phys,. Lett., vol. 63, No. 10, Sep. 6, 1993.

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