Semiconductor laser device and method of fabricating the same

Details Semiconductor laser device and method of fabricating the same Semiconductor laser device and method of fabricating the same

2007-03-27

2007-03-27

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

Reexamination Certificate

active

10896344

ABSTRACT:
The width of a current pass region of a semiconductor laser device is narrowed as much as possible, thus implementing a stable single transverse mode. The device is relatively resistant against physical impact. The device includes a semiconductor substrate having first and second opposite surfaces, and, in order, a first conductive type clad, active layer, etch stop layer, current blocking layer formed in a V-groove shape so that a part of the etch stop layer is exposed, second conductive type clad formed entirely over the entire of the V-groove and the current blocking layer, optical guide layer, current pass facilitation layer, cap layer, second conductive type electrode, and a first conductive type electrode formed on the second surface of the semiconductor substrate.

REFERENCES:
patent: 4974233 (1990-11-01), Suzuki et al.
patent: 5058120 (1991-10-01), Nitta et al.
patent: 5533041 (1996-07-01), Matsuda et al.
patent: 2003/0138016 (2003-07-01), Kise et al.
patent: 2003/0179794 (2003-09-01), Mihashi et al.

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