Semiconductor laser device and method of fabricating the same

Details Semiconductor laser device and method of fabricating the same Semiconductor laser device and method of fabricating the same

2005-11-22

2005-11-22

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S077000, C438S085000, C438S093000

Reexamination Certificate

active

06967119

ABSTRACT:
There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provided a method of fabricating a semiconductor laser device, forming on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, initially forming a laser portion in a crystal growth method and subsequently forming another laser portion in a different crystal growth method.

REFERENCES:
patent: 2001/0021209 (2001-09-01), Onishi
patent: 2002/0041148 (2002-04-01), Cho et al.
patent: 2003/0194823 (2003-10-01), Miyasaki et al.
patent: 1-204487 (1989-08-01), None
patent: 10-229249 (1998-08-01), None
patent: 2001-57462 (2001-02-01), None
patent: 2001-244572 (2001-09-01), None

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