Semiconductor laser device and method of fabricating the same

Details Semiconductor laser device and method of fabricating the same Semiconductor laser device and method of fabricating the same

1986-08-11

1989-05-02

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, 357 17, H01S 319

Patent

active

048274836

ABSTRACT:
A semiconductor laser device including at least one of a laser active layer formed of a super lattice and an optical guide layer formed of another super lattice is disclosed in which part of at least one of the super lattices is converted into a mixed crystal by the impurity induced disordering based upon one of impurity diffusion and impurity ion implantation, to divide the super lattice into a first region formed of the mixed crystal and a second region having the super lattice structure, the width of the second region in directions perpendicular to the lengthwise direction of a laser cavity varies along the above lengthwise direction, and the width of a laser excitation region is smaller than the mean value of the width of the second region, to generate laser oscillation having a single transverse mode and a multi longitudinal mode. Thus, the semiconductor laser device emits a laser beam which is small in astigmatism and low in optical feedback noise.

REFERENCES:
patent: 4594718 (1986-06-01), Scifres et al.
patent: 4608695 (1986-08-01), Oda et al.

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