Semiconductor laser device and method for producing the same

Details Semiconductor laser device and method for producing the same Semiconductor laser device and method for producing the same

1997-01-30

2000-04-25

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

060552557

ABSTRACT:
A semiconductor laser device includes: a semiconductor substrate of a first conductivity type; a layered structure including at least a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type. The layered structure is provided on the semiconductor substrate. The semiconductor laser device also includes: a current blocking structure, having a striped concave portion therein, formed on the layered structure; and a third cladding layer of the second conductivity type provided so as to cover the striped concave portion and the current blocking structure. The current blocking structure includes at least a saturable absorbing layer having a forbidden band width which is substantially equal to a forbidden band width of the active layer.

REFERENCES:
patent: 4961197 (1990-10-01), Tanaka et al.
patent: 5136601 (1992-08-01), Kajimura et al.
Yamada, "A theoretical analysis of self-sustained pulsation phenomena in narrow-stripe semiconductor lasers" IEEE Journal of Quantum Electronics (May 1993) 29(5):1330-1336.
Takayama et al., "800m V peak power self-sustained pulsation GaAlAs lasrer diodes" 14th IEEE International Semiconductor Laser Conference (Sep. 19-23, 1994) pp. 247-248.
Hayashi et al., "Low noise and high output-power infrared semiconductor laser having saturable absorbing layer" Proceedings of the 12th Semiconductor Laser Symposium (Mar. 3, 1995) p. 11. A partial English translation is included herewith.

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