Semiconductor laser device, and method for producing it

Details Semiconductor laser device, and method for producing it Semiconductor laser device, and method for producing it

2005-09-20

2005-09-20

Harvey, Sun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S044010, C372S045013, C372S046012, C372S049010, C372S049010, C372S049010

Reexamination Certificate

active

06947464

ABSTRACT:
A semiconductor laser device, having an epitaxial semiconductor body (40) with a waveguiding layer (22), which contains an active radiation-generating layer (20), a laser-active emitter region (12), disposed in the epitaxial semiconductor body (40) and having a primary direction (30), which essentially corresponds to the exit direction of the laser radiation from the emitter region, and an amplifier region (14), adjoining the emitter region (12) in the semiconductor body (40) in the primary direction (30), for amplifying the laser radiation. The emitter region (12) and the amplifier region (14) form active regions in the semiconductor material. The waveguiding layer (22) is removed in some regions of the semiconductor body (40) outside the active regions (12, 14), in such a way that flanks (18; 32; 36) of the semiconductor body (40) that are produced by the removal form a shallow angle τ with the plane in which lies the waveguiding layer.

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